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Impact of defect occupation on conduction in amorphous Ge(2)Sb(2)Te(5)
Storage concepts employing the resistance of phase-change memory (PRAM) have matured in recent years. Attempts to model the conduction in the amorphous state of phase-change materials dominating the resistance of PRAM devices commonly invoke a connection to the electronic density-of-states (DoS) of...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4985640/ https://www.ncbi.nlm.nih.gov/pubmed/27526783 http://dx.doi.org/10.1038/srep31699 |