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Stacking orders induced direct band gap in bilayer MoSe(2)-WSe(2) lateral heterostructures
The direct band gap of monolayer semiconducting transition-metal dichalcogenides (STMDs) enables a host of new optical and electrical properties. However, bilayer STMDs are indirect band gap semiconductors, which limits its applicability for high-efficiency optoelectronic devices. Here, we report th...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4985822/ https://www.ncbi.nlm.nih.gov/pubmed/27528196 http://dx.doi.org/10.1038/srep31122 |