Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory

A study on the bipolar-resistive switching of an Ni/SiN/Si-based resistive random-access memory (RRAM) device shows that the influences of the reset power and the resistance value of the low-resistance state (LRS) on the reset-switching transitions are strong. For a low LRS with a large conducting p...

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Detalles Bibliográficos
Autores principales: Kim, Sungjun, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4987577/
https://www.ncbi.nlm.nih.gov/pubmed/27518231
http://dx.doi.org/10.1186/s11671-016-1572-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4987577/
https://www.ncbi.nlm.nih.gov/pubmed/27518231
http://dx.doi.org/10.1186/s11671-016-1572-9

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