Nonvolatile and tunable switching of lateral photo-voltage triggered by laser and electric pulse in metal dusted metal-oxide-semiconductor structures

Owing to the innate stabilization of built-in potential in p–n junction or metal-oxide-semiconductor structure, the sensitivity and linearity of most lateral photovoltaic effect (LPE) devices is always fixed after fabrication. Here we report a nonvolatile and tunable switching effect of lateral phot...

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Detalles Bibliográficos
Autores principales: Zhou, Peiqi, Gan, Zhikai, Huang, Xu, Mei, Chunlian, Huang, Meizhen, Xia, Yuxing, Wang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989190/
https://www.ncbi.nlm.nih.gov/pubmed/27535351
http://dx.doi.org/10.1038/srep32015

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4989190/
https://www.ncbi.nlm.nih.gov/pubmed/27535351
http://dx.doi.org/10.1038/srep32015

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