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Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)
We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800–1100 °C of 30–150 nm Ge layers deposited on Si(100) at 400–500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porou...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer US
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4991982/ https://www.ncbi.nlm.nih.gov/pubmed/27541814 http://dx.doi.org/10.1186/s11671-016-1588-1 |