Status and Prospects of ZnO-Based Resistive Switching Memory Devices

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices ha...

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Detalles Bibliográficos
Autores principales: Simanjuntak, Firman Mangasa, Panda, Debashis, Wei, Kung-Hwa, Tseng, Tseung-Yuen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4991985/
https://www.ncbi.nlm.nih.gov/pubmed/27541816
http://dx.doi.org/10.1186/s11671-016-1570-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4991985/
https://www.ncbi.nlm.nih.gov/pubmed/27541816
http://dx.doi.org/10.1186/s11671-016-1570-y

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