Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes

The continuing revolutionary success of mobile computing and smart devices calls for the development of novel, cost- and energy-efficient memories. Resistive switching is attractive because of, inter alia, increased switching speed and device density. On electrical stimulus, complex nanoscale redox...

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Detalles Bibliográficos
Autores principales: Baeumer, Christoph, Schmitz, Christoph, Marchewka, Astrid, Mueller, David N., Valenta, Richard, Hackl, Johanna, Raab, Nicolas, Rogers, Steven P., Khan, M. Imtiaz, Nemsak, Slavomir, Shim, Moonsub, Menzel, Stephan, Schneider, Claus Michael, Waser, Rainer, Dittmann, Regina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992164/
https://www.ncbi.nlm.nih.gov/pubmed/27539213
http://dx.doi.org/10.1038/ncomms12398

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992164/
https://www.ncbi.nlm.nih.gov/pubmed/27539213
http://dx.doi.org/10.1038/ncomms12398

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