Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric powe...

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Detalles Bibliográficos
Autores principales: Matsumoto, Tsubasa, Kato, Hiromitsu, Oyama, Kazuhiro, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Inokuma, Takao, Tokuda, Norio, Yamasaki, Satoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992857/
https://www.ncbi.nlm.nih.gov/pubmed/27545201
http://dx.doi.org/10.1038/srep31585

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4992857/
https://www.ncbi.nlm.nih.gov/pubmed/27545201
http://dx.doi.org/10.1038/srep31585

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