Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnost...

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Detalles Bibliográficos
Autores principales: Liu, Zhiqiang, Huang, Yang, Yi, Xiaoyan, Fu, Binglei, Yuan, Guodong, Wang, Junxi, Li, Jinmin, Zhang, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4994085/
https://www.ncbi.nlm.nih.gov/pubmed/27550805
http://dx.doi.org/10.1038/srep32033

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4994085/
https://www.ncbi.nlm.nih.gov/pubmed/27550805
http://dx.doi.org/10.1038/srep32033

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