Performance of arsenene and antimonene double-gate MOSFETs from first principles

In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed mu...

Descripción completa

Detalles Bibliográficos
Autores principales: Pizzi, Giovanni, Gibertini, Marco, Dib, Elias, Marzari, Nicola, Iannaccone, Giuseppe, Fiori, Gianluca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5007351/
https://www.ncbi.nlm.nih.gov/pubmed/27557562
http://dx.doi.org/10.1038/ncomms12585

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5007351/
https://www.ncbi.nlm.nih.gov/pubmed/27557562
http://dx.doi.org/10.1038/ncomms12585

Ejemplares similares