Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX(2) (X = S, Se and Te)

We present a newtype 2-dimensional (2D) magnetic semiconductor based on transition-metal dichalcogenides VX(2) (X = S, Se and Te) via first-principles calculations. The obtained indirect band gaps of monolayer VS(2), VSe(2), and VTe(2) given from the generalized gradient approximation (GGA) are resp...

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Detalles Bibliográficos
Autores principales: Fuh, Huei-Ru, Chang, Ching-Ray, Wang, Yin-Kuo, Evans, Richard F. L., Chantrell, Roy W., Jeng, Horng-Tay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013522/
https://www.ncbi.nlm.nih.gov/pubmed/27601195
http://dx.doi.org/10.1038/srep32625

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013522/
https://www.ncbi.nlm.nih.gov/pubmed/27601195
http://dx.doi.org/10.1038/srep32625

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