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Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of μm-thick a-Si:H Films

Being a low-cost, mass-production-compatible route to attain crystalline silicon, post-deposition crystallization of amorphous silicon has received intensive research interest. Here we report a low-temperature (300 °C), rapid (crystallization rate of ~17 nm/min) means of a-Si:H crystallization based...

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Detalles Bibliográficos
Autores principales:	Zhou, H. P., Xu, M., Xu, S., Liu, L. L., Liu, C. X., Kwek, L. C., Xu, L. X.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5013535/ https://www.ncbi.nlm.nih.gov/pubmed/27600866 http://dx.doi.org/10.1038/srep32716

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