High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanc...

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Detalles Bibliográficos
Autores principales: Lin, Yen‐Hung, Faber, Hendrik, Labram, John G., Stratakis, Emmanuel, Sygellou, Labrini, Kymakis, Emmanuel, Hastas, Nikolaos A., Li, Ruipeng, Zhao, Kui, Amassian, Aram, Treat, Neil D., McLachlan, Martyn, Anthopoulos, Thomas D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5016782/
https://www.ncbi.nlm.nih.gov/pubmed/27660741
http://dx.doi.org/10.1002/advs.201500058

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5016782/
https://www.ncbi.nlm.nih.gov/pubmed/27660741
http://dx.doi.org/10.1002/advs.201500058

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