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High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanc...

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Autores principales: Lin, Yen‐Hung, Faber, Hendrik, Labram, John G., Stratakis, Emmanuel, Sygellou, Labrini, Kymakis, Emmanuel, Hastas, Nikolaos A., Li, Ruipeng, Zhao, Kui, Amassian, Aram, Treat, Neil D., McLachlan, Martyn, Anthopoulos, Thomas D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5016782/
https://www.ncbi.nlm.nih.gov/pubmed/27660741
http://dx.doi.org/10.1002/advs.201500058
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author Lin, Yen‐Hung
Faber, Hendrik
Labram, John G.
Stratakis, Emmanuel
Sygellou, Labrini
Kymakis, Emmanuel
Hastas, Nikolaos A.
Li, Ruipeng
Zhao, Kui
Amassian, Aram
Treat, Neil D.
McLachlan, Martyn
Anthopoulos, Thomas D.
author_facet Lin, Yen‐Hung
Faber, Hendrik
Labram, John G.
Stratakis, Emmanuel
Sygellou, Labrini
Kymakis, Emmanuel
Hastas, Nikolaos A.
Li, Ruipeng
Zhao, Kui
Amassian, Aram
Treat, Neil D.
McLachlan, Martyn
Anthopoulos, Thomas D.
author_sort Lin, Yen‐Hung
collection PubMed
description High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In(2)O(3), Ga(2)O(3,) and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm(2) V(−1) s(−1)) than single oxide devices (typically 2–5 cm(2) V(−1) s(−1)). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement.
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spelling pubmed-50167822016-09-20 High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices Lin, Yen‐Hung Faber, Hendrik Labram, John G. Stratakis, Emmanuel Sygellou, Labrini Kymakis, Emmanuel Hastas, Nikolaos A. Li, Ruipeng Zhao, Kui Amassian, Aram Treat, Neil D. McLachlan, Martyn Anthopoulos, Thomas D. Adv Sci (Weinh) Full Papers High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In(2)O(3), Ga(2)O(3,) and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm(2) V(−1) s(−1)) than single oxide devices (typically 2–5 cm(2) V(−1) s(−1)). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement. John Wiley and Sons Inc. 2015-05-26 /pmc/articles/PMC5016782/ /pubmed/27660741 http://dx.doi.org/10.1002/advs.201500058 Text en © 2015 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Lin, Yen‐Hung
Faber, Hendrik
Labram, John G.
Stratakis, Emmanuel
Sygellou, Labrini
Kymakis, Emmanuel
Hastas, Nikolaos A.
Li, Ruipeng
Zhao, Kui
Amassian, Aram
Treat, Neil D.
McLachlan, Martyn
Anthopoulos, Thomas D.
High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title_full High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title_fullStr High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title_full_unstemmed High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title_short High Electron Mobility Thin‐Film Transistors Based on Solution‐Processed Semiconducting Metal Oxide Heterojunctions and Quasi‐Superlattices
title_sort high electron mobility thin‐film transistors based on solution‐processed semiconducting metal oxide heterojunctions and quasi‐superlattices
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5016782/
https://www.ncbi.nlm.nih.gov/pubmed/27660741
http://dx.doi.org/10.1002/advs.201500058
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