Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films

Using reflection high-energy electron diffraction (RHEED), the growth onset of molecular beam epitaxy (MBE) deposited germanium telluride (GeTe) film on Si(111)-(√3 × √3)R30°-Sb surfaces is investigated, and a larger than expected in-plane lattice spacing is observed during the deposition of the fir...

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Detalles Bibliográficos
Autores principales: Wang, Ruining, Campi, Davide, Bernasconi, Marco, Momand, Jamo, Kooi, Bart J., Verheijen, Marcel A., Wuttig, Matthias, Calarco, Raffaella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5017194/
https://www.ncbi.nlm.nih.gov/pubmed/27612303
http://dx.doi.org/10.1038/srep32895

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5017194/
https://www.ncbi.nlm.nih.gov/pubmed/27612303
http://dx.doi.org/10.1038/srep32895

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