Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature

Spin transistors have attracted tremendous interest as new functional devices. However, few studies have investigated enhancements of the ON/OFF current ratio as a function of the electron spin behavior. Here, we found a significantly high spin-dependent current ratio—more than 10(2) at 1.5 V—when c...

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Detalles Bibliográficos
Autores principales: Makihara, Katsunori, Kato, Takeshi, Kabeya, Yuuki, Mitsuyuki, Yusuke, Ohta, Akio, Oshima, Daiki, Iwata, Satoshi, Darma, Yudi, Ikeda, Mitsuhisa, Miyazaki, Seiichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018842/
https://www.ncbi.nlm.nih.gov/pubmed/27615374
http://dx.doi.org/10.1038/srep33409

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018842/
https://www.ncbi.nlm.nih.gov/pubmed/27615374
http://dx.doi.org/10.1038/srep33409

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