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Dynamics of surface evolution in semiconductor thin films grown from a chemical bath

Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents α(loc) = 0.78 ± 0.07, α = 2.20 ± 0....

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Autores principales: Gupta, Indu, Mohanty, Bhaskar Chandra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018873/
https://www.ncbi.nlm.nih.gov/pubmed/27615367
http://dx.doi.org/10.1038/srep33136
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author Gupta, Indu
Mohanty, Bhaskar Chandra
author_facet Gupta, Indu
Mohanty, Bhaskar Chandra
author_sort Gupta, Indu
collection PubMed
description Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents α(loc) = 0.78 ± 0.07, α = 2.20 ± 0.08, α(s) = 1.49 ± 0.22, β = 0.86 ± 0.05 and β(loc) = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability.
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spelling pubmed-50188732016-09-19 Dynamics of surface evolution in semiconductor thin films grown from a chemical bath Gupta, Indu Mohanty, Bhaskar Chandra Sci Rep Article Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents α(loc) = 0.78 ± 0.07, α = 2.20 ± 0.08, α(s) = 1.49 ± 0.22, β = 0.86 ± 0.05 and β(loc) = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability. Nature Publishing Group 2016-09-12 /pmc/articles/PMC5018873/ /pubmed/27615367 http://dx.doi.org/10.1038/srep33136 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Gupta, Indu
Mohanty, Bhaskar Chandra
Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title_full Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title_fullStr Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title_full_unstemmed Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title_short Dynamics of surface evolution in semiconductor thin films grown from a chemical bath
title_sort dynamics of surface evolution in semiconductor thin films grown from a chemical bath
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018873/
https://www.ncbi.nlm.nih.gov/pubmed/27615367
http://dx.doi.org/10.1038/srep33136
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