Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the in...

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Detalles Bibliográficos
Autores principales: Nguyen, Ky V., Payne, Marcia M., Anthony, John E., Lee, Jung Hun, Song, Eunjoo, Kang, Boseok, Cho, Kilwon, Lee, Wi Hyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018961/
https://www.ncbi.nlm.nih.gov/pubmed/27615358
http://dx.doi.org/10.1038/srep33224

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5018961/
https://www.ncbi.nlm.nih.gov/pubmed/27615358
http://dx.doi.org/10.1038/srep33224

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