Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures

The mechanism of flat band voltage (V(FB)) shift for alternate La(2)O(3)/Al(2)O(3) multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) m...

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Detalles Bibliográficos
Autores principales: Feng, Xing-Yao, Liu, Hong-Xia, Wang, Xing, Zhao, Lu, Fei, Chen-Xi, Liu, He-Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020021/
https://www.ncbi.nlm.nih.gov/pubmed/27620192
http://dx.doi.org/10.1186/s11671-016-1623-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020021/
https://www.ncbi.nlm.nih.gov/pubmed/27620192
http://dx.doi.org/10.1186/s11671-016-1623-2

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