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Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures

The mechanism of flat band voltage (V(FB)) shift for alternate La(2)O(3)/Al(2)O(3) multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) m...

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Autores principales: Feng, Xing-Yao, Liu, Hong-Xia, Wang, Xing, Zhao, Lu, Fei, Chen-Xi, Liu, He-Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020021/
https://www.ncbi.nlm.nih.gov/pubmed/27620192
http://dx.doi.org/10.1186/s11671-016-1623-2
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author Feng, Xing-Yao
Liu, Hong-Xia
Wang, Xing
Zhao, Lu
Fei, Chen-Xi
Liu, He-Lei
author_facet Feng, Xing-Yao
Liu, Hong-Xia
Wang, Xing
Zhao, Lu
Fei, Chen-Xi
Liu, He-Lei
author_sort Feng, Xing-Yao
collection PubMed
description The mechanism of flat band voltage (V(FB)) shift for alternate La(2)O(3)/Al(2)O(3) multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the V(FB) of samples shift negatively for thinner bottom Al(2)O(3) layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high-k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al(2)O(3)/Si interface and V(FB) shift is found. Without changing the dielectric constant k of films, V(FB) shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high-k multilayer stack.
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spelling pubmed-50200212016-09-26 Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures Feng, Xing-Yao Liu, Hong-Xia Wang, Xing Zhao, Lu Fei, Chen-Xi Liu, He-Lei Nanoscale Res Lett Nano Express The mechanism of flat band voltage (V(FB)) shift for alternate La(2)O(3)/Al(2)O(3) multilayer stack structures in different annealing condition is investigated. The samples were prepared for alternate multilayer structures, which were annealed in different conditions. The capacitance-voltage (C-V) measuring results indicate that the V(FB) of samples shift negatively for thinner bottom Al(2)O(3) layer, increasing annealing temperature or longer annealing duration. Simultaneously, the diffusion of high-k material to interfaces in different multilayer structures and annealing conditions is observed by X-ray photoelectron spectroscopy (XPS). Based on the dipole theory, a correlation between the diffusion effect of La towards bottom Al(2)O(3)/Si interface and V(FB) shift is found. Without changing the dielectric constant k of films, V(FB) shift can be manipulated by controlling the single-layer cycles and annealing conditions of alternate high-k multilayer stack. Springer US 2016-09-13 /pmc/articles/PMC5020021/ /pubmed/27620192 http://dx.doi.org/10.1186/s11671-016-1623-2 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Feng, Xing-Yao
Liu, Hong-Xia
Wang, Xing
Zhao, Lu
Fei, Chen-Xi
Liu, He-Lei
Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title_full Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title_fullStr Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title_full_unstemmed Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title_short Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La(2)O(3)/Al(2)O(3) Multilayer Stack Structures
title_sort impacts of annealing conditions on the flat band voltage of alternate la(2)o(3)/al(2)o(3) multilayer stack structures
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5020021/
https://www.ncbi.nlm.nih.gov/pubmed/27620192
http://dx.doi.org/10.1186/s11671-016-1623-2
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