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A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance
Solution-processed gate dielectrics were fabricated with the combined ZrO(2) and Al(2)O(3) (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the firs...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5027534/ https://www.ncbi.nlm.nih.gov/pubmed/27641430 http://dx.doi.org/10.1038/srep33576 |