A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

Solution-processed gate dielectrics were fabricated with the combined ZrO(2) and Al(2)O(3) (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the firs...

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Detalles Bibliográficos
Autores principales: Kim, Hunho, Kwack, Young-Jin, Yun, Eui-Jung, Choi, Woon-Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5027534/
https://www.ncbi.nlm.nih.gov/pubmed/27641430
http://dx.doi.org/10.1038/srep33576

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5027534/
https://www.ncbi.nlm.nih.gov/pubmed/27641430
http://dx.doi.org/10.1038/srep33576

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