Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlO(x) films under 150 °C permitted the formation of a dense fil...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Jaekyun, Park, Chang Jun, Yi, Gyeongmin, Choi, Myung-Seok, Park, Sung Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455382/
https://www.ncbi.nlm.nih.gov/pubmed/28793608
http://dx.doi.org/10.3390/ma8105352

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455382/
https://www.ncbi.nlm.nih.gov/pubmed/28793608
http://dx.doi.org/10.3390/ma8105352

Ejemplares similares