Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide...

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Detalles Bibliográficos
Autores principales: Zhang, Xue, Lee, Hyeonju, Kim, Jungwon, Kim, Eui-Jik, Park, Jaehoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793544/
https://www.ncbi.nlm.nih.gov/pubmed/29283408
http://dx.doi.org/10.3390/ma11010046

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5793544/
https://www.ncbi.nlm.nih.gov/pubmed/29283408
http://dx.doi.org/10.3390/ma11010046

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