Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential...

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Detalles Bibliográficos
Autores principales: Zhang, Xue, Lee, Hyeonju, Kwon, Jung-Hyok, Kim, Eui-Jik, Park, Jaehoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578246/
https://www.ncbi.nlm.nih.gov/pubmed/28773242
http://dx.doi.org/10.3390/ma10080880

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578246/
https://www.ncbi.nlm.nih.gov/pubmed/28773242
http://dx.doi.org/10.3390/ma10080880

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