Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nan...

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Detalles Bibliográficos
Autores principales: Cao, Tao, Luo, Laitang, Huang, Yifeng, Ye, Bing, She, Juncong, Deng, Shaozhi, Chen, Jun, Xu, Ningsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5032023/
https://www.ncbi.nlm.nih.gov/pubmed/27654068
http://dx.doi.org/10.1038/srep33983

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5032023/
https://www.ncbi.nlm.nih.gov/pubmed/27654068
http://dx.doi.org/10.1038/srep33983

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