Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient op...

Descripción completa

Detalles Bibliográficos
Autores principales: Ko, Wai Son, Bhattacharya, Indrasen, Tran, Thai-Truong D., Ng, Kar Wei, Adair Gerke, Stephen, Chang-Hasnain, Connie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5034248/
https://www.ncbi.nlm.nih.gov/pubmed/27659796
http://dx.doi.org/10.1038/srep33368

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5034248/
https://www.ncbi.nlm.nih.gov/pubmed/27659796
http://dx.doi.org/10.1038/srep33368

Ejemplares similares