Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices

The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with...

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Detalles Bibliográficos
Autores principales: Song, Younggul, Jeong, Hyunhak, Chung, Seungjun, Ahn, Geun Ho, Kim, Tae-Young, Jang, Jingon, Yoo, Daekyoung, Jeong, Heejun, Javey, Ali, Lee, Takhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5034279/
https://www.ncbi.nlm.nih.gov/pubmed/27659298
http://dx.doi.org/10.1038/srep33967

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5034279/
https://www.ncbi.nlm.nih.gov/pubmed/27659298
http://dx.doi.org/10.1038/srep33967

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