Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here...

Descripción completa

Detalles Bibliográficos
Autores principales: K. C., Santosh, Longo, Roberto C., Addou, Rafik, Wallace, Robert M., Cho, Kyeongjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5035990/
https://www.ncbi.nlm.nih.gov/pubmed/27666523
http://dx.doi.org/10.1038/srep33562

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5035990/
https://www.ncbi.nlm.nih.gov/pubmed/27666523
http://dx.doi.org/10.1038/srep33562

Ejemplares similares