Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application

This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal l...

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Detalles Bibliográficos
Autores principales: Chatterjee, Prasenjit, Chow, Hwang-Cherng, Feng, Wu-Shiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5038667/
https://www.ncbi.nlm.nih.gov/pubmed/27589747
http://dx.doi.org/10.3390/s16091389

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5038667/
https://www.ncbi.nlm.nih.gov/pubmed/27589747
http://dx.doi.org/10.3390/s16091389

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