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Drain Current Modulation of a Single Drain MOSFET by Lorentz Force for Magnetic Sensing Application
This paper reports a detailed analysis of the drain current modulation of a single-drain normal-gate n channel metal-oxide semiconductor field effect transistor (n-MOSFET) under an on-chip magnetic field. A single-drain n-MOSFET has been fabricated and placed in the center of a square-shaped metal l...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5038667/ https://www.ncbi.nlm.nih.gov/pubmed/27589747 http://dx.doi.org/10.3390/s16091389 |