Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co(2)Fe(6)B(2) Free Layer Structure

For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co(2)Fe(6)B(2) free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the...

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Detalles Bibliográficos
Autores principales: Lee, Du-Yeong, Lee, Seung-Eun, Shim, Tae-Hun, Park, Jea-Gun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039147/
https://www.ncbi.nlm.nih.gov/pubmed/27677304
http://dx.doi.org/10.1186/s11671-016-1637-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5039147/
https://www.ncbi.nlm.nih.gov/pubmed/27677304
http://dx.doi.org/10.1186/s11671-016-1637-9

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