Thermally induced crystallization in NbO(2) thin films

Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest for its potential applications as a highly non-linear selector element in emerging nonvolatile memory (NVM) and as a locally-active element in...

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Detalles Bibliográficos
Autores principales: Zhang, Jiaming, Norris, Kate J., Gibson, Gary, Zhao, Dongxue, Samuels, Katy, Zhang, Minxian Max, Yang, J. Joshua, Park, Joonsuk, Sinclair, Robert, Jeon, Yoocharn, Li, Zhiyong, Williams, R. Stanley
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5041100/
https://www.ncbi.nlm.nih.gov/pubmed/27682633
http://dx.doi.org/10.1038/srep34294

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5041100/
https://www.ncbi.nlm.nih.gov/pubmed/27682633
http://dx.doi.org/10.1038/srep34294

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