Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy

Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deep...

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Detalles Bibliográficos
Autores principales: Bao, Wei, Su, Zhicheng, Zheng, Changcheng, Ning, Jiqiang, Xu, Shijie
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5043280/
https://www.ncbi.nlm.nih.gov/pubmed/27686154
http://dx.doi.org/10.1038/srep34545

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5043280/
https://www.ncbi.nlm.nih.gov/pubmed/27686154
http://dx.doi.org/10.1038/srep34545

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