Design and fabrication of high-performance diamond triple-gate field-effect transistors

The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output cur...

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Detalles Bibliográficos
Autores principales: Liu, Jiangwei, Ohsato, Hirotaka, Wang, Xi, Liao, Meiyong, Koide, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5052526/
https://www.ncbi.nlm.nih.gov/pubmed/27708372
http://dx.doi.org/10.1038/srep34757

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5052526/
https://www.ncbi.nlm.nih.gov/pubmed/27708372
http://dx.doi.org/10.1038/srep34757

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