Controllable growth of vertically aligned graphene on C-face SiC

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline qua...

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Detalles Bibliográficos
Autores principales: Liu, Yu, Chen, Lianlian, Hilliard, Donovan, Huang, Qing-song, Liu, Fang, Wang, Mao, Böttger, Roman, Hübner, René, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, Zhou, Shengqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5052588/
https://www.ncbi.nlm.nih.gov/pubmed/27708399
http://dx.doi.org/10.1038/srep34814

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5052588/
https://www.ncbi.nlm.nih.gov/pubmed/27708399
http://dx.doi.org/10.1038/srep34814

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