Controlling the defects and transition layer in SiO(2) films grown on 4H-SiC via direct plasma-assisted oxidation

The structural stability and electrical performance of SiO(2) grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO(2) film (thickness ~5 nm) and Si...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Dae-Kyoung, Jeong, Kwang-Sik, Kang, Yu-Seon, Kang, Hang-Kyu, Cho, Sang W., Kim, Sang-Ok, Suh, Dongchan, Kim, Sunjung, Cho, Mann-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056351/
https://www.ncbi.nlm.nih.gov/pubmed/27721493
http://dx.doi.org/10.1038/srep34945

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056351/
https://www.ncbi.nlm.nih.gov/pubmed/27721493
http://dx.doi.org/10.1038/srep34945

Ejemplares similares