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Controlling the defects and transition layer in SiO(2) films grown on 4H-SiC via direct plasma-assisted oxidation

The structural stability and electrical performance of SiO(2) grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO(2) film (thickness ~5 nm) and Si...

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Detalles Bibliográficos
Autores principales:	Kim, Dae-Kyoung, Jeong, Kwang-Sik, Kang, Yu-Seon, Kang, Hang-Kyu, Cho, Sang W., Kim, Sang-Ok, Suh, Dongchan, Kim, Sunjung, Cho, Mann-Ho
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056351/ https://www.ncbi.nlm.nih.gov/pubmed/27721493 http://dx.doi.org/10.1038/srep34945

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