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Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current
This article proposes a disruptive device concept which meets both low power and high performance criterion for post-CMOS computing and at the same time enables aggressive channel length scaling. This device, hereafter refer to as two-dimensional electrostrictive field effect transistor or 2D-EFET,...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056397/ https://www.ncbi.nlm.nih.gov/pubmed/27721489 http://dx.doi.org/10.1038/srep34811 |