High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions

Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely co...

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Detalles Bibliográficos
Autores principales: Wang, Liang-Xing, Zhou, Zhi-Quan, Zhang, Tian-Ning, Chen, Xin, Lu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056919/
https://www.ncbi.nlm.nih.gov/pubmed/27726121
http://dx.doi.org/10.1186/s11671-016-1678-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056919/
https://www.ncbi.nlm.nih.gov/pubmed/27726121
http://dx.doi.org/10.1186/s11671-016-1678-0

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