High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions

Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely co...

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Autores principales: Wang, Liang-Xing, Zhou, Zhi-Quan, Zhang, Tian-Ning, Chen, Xin, Lu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056919/
https://www.ncbi.nlm.nih.gov/pubmed/27726121
http://dx.doi.org/10.1186/s11671-016-1678-0
_version_ 1782458965411495936
author Wang, Liang-Xing
Zhou, Zhi-Quan
Zhang, Tian-Ning
Chen, Xin
Lu, Ming
author_facet Wang, Liang-Xing
Zhou, Zhi-Quan
Zhang, Tian-Ning
Chen, Xin
Lu, Ming
author_sort Wang, Liang-Xing
collection PubMed
description Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.
format Online
Article
Text
id pubmed-5056919
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-50569192016-10-26 High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions Wang, Liang-Xing Zhou, Zhi-Quan Zhang, Tian-Ning Chen, Xin Lu, Ming Nanoscale Res Lett Nano Express Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved. Springer US 2016-10-10 /pmc/articles/PMC5056919/ /pubmed/27726121 http://dx.doi.org/10.1186/s11671-016-1678-0 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Liang-Xing
Zhou, Zhi-Quan
Zhang, Tian-Ning
Chen, Xin
Lu, Ming
High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title_full High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title_fullStr High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title_full_unstemmed High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title_short High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
title_sort high fill factors of si solar cells achieved by using an inverse connection between mos and pn junctions
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056919/
https://www.ncbi.nlm.nih.gov/pubmed/27726121
http://dx.doi.org/10.1186/s11671-016-1678-0
work_keys_str_mv AT wangliangxing highfillfactorsofsisolarcellsachievedbyusinganinverseconnectionbetweenmosandpnjunctions
AT zhouzhiquan highfillfactorsofsisolarcellsachievedbyusinganinverseconnectionbetweenmosandpnjunctions
AT zhangtianning highfillfactorsofsisolarcellsachievedbyusinganinverseconnectionbetweenmosandpnjunctions
AT chenxin highfillfactorsofsisolarcellsachievedbyusinganinverseconnectionbetweenmosandpnjunctions
AT luming highfillfactorsofsisolarcellsachievedbyusinganinverseconnectionbetweenmosandpnjunctions

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