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High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions
Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely co...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5056919/ https://www.ncbi.nlm.nih.gov/pubmed/27726121 http://dx.doi.org/10.1186/s11671-016-1678-0 |