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The relationship between the dislocations and microstructure in In(0.82)Ga(0.18)As/InP heterostructures
In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In(0.82)Ga(0.18)As/InP heterostructure. The In(0.82)Ga(0.18)As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057123/ https://www.ncbi.nlm.nih.gov/pubmed/27725753 http://dx.doi.org/10.1038/srep35139 |