Cargando…

The relationship between the dislocations and microstructure in In(0.82)Ga(0.18)As/InP heterostructures

In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In(0.82)Ga(0.18)As/InP heterostructure. The In(0.82)Ga(0.18)As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhao, Liang, Guo, Zuoxing, Wei, Qiulin, Miao, Guoqing, Zhao, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057123/
https://www.ncbi.nlm.nih.gov/pubmed/27725753
http://dx.doi.org/10.1038/srep35139

Ejemplares similares