Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance betwee...

Descripción completa

Detalles Bibliográficos
Autores principales: Suga, Hiroshi, Suzuki, Hiroya, Shinomura, Yuma, Kashiwabara, Shota, Tsukagoshi, Kazuhito, Shimizu, Tetsuo, Naitoh, Yasuhisa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057135/
https://www.ncbi.nlm.nih.gov/pubmed/27725705
http://dx.doi.org/10.1038/srep34961

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057135/
https://www.ncbi.nlm.nih.gov/pubmed/27725705
http://dx.doi.org/10.1038/srep34961

Ejemplares similares