Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused...

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Detalles Bibliográficos
Autores principales: Lee, Heesoo, Chang, Ki Soo, Tak, Young Jun, Jung, Tae Soo, Park, Jeong Woo, Kim, Won-Gi, Chung, Jusung, Jeong, Chan Bae, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057139/
https://www.ncbi.nlm.nih.gov/pubmed/27725695
http://dx.doi.org/10.1038/srep35044

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5057139/
https://www.ncbi.nlm.nih.gov/pubmed/27725695
http://dx.doi.org/10.1038/srep35044

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