Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in Materials

In this paper, we attempt to understand the physico-chemical changes that occur in devices during device “burn-in”. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the dielectrics of through silicon vias (TSV) f...

Descripción completa

Detalles Bibliográficos
Autores principales: Obeng, Yaw S., Okoro, Chukwudi A., Amoah, Papa K., Dai, Johnny, Vartanian, Victor H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5058429/
https://www.ncbi.nlm.nih.gov/pubmed/27738561
http://dx.doi.org/10.1149/2.0411609jss

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5058429/
https://www.ncbi.nlm.nih.gov/pubmed/27738561
http://dx.doi.org/10.1149/2.0411609jss

Ejemplares similares