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Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in Materials
In this paper, we attempt to understand the physico-chemical changes that occur in devices during device “burn-in”. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects present in the dielectrics of through silicon vias (TSV) f...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5058429/ https://www.ncbi.nlm.nih.gov/pubmed/27738561 http://dx.doi.org/10.1149/2.0411609jss |