Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-widt...

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Detalles Bibliográficos
Autores principales: Li, Hongjian, Li, Panpan, Kang, Junjie, Ding, Jiianfeng, Ma, Jun, Zhang, Yiyun, Yi, Xiaoyan, Wang, Guohong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5062469/
https://www.ncbi.nlm.nih.gov/pubmed/27734917
http://dx.doi.org/10.1038/srep35217

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5062469/
https://www.ncbi.nlm.nih.gov/pubmed/27734917
http://dx.doi.org/10.1038/srep35217

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