Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires

We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the ma...

Descripción completa

Detalles Bibliográficos
Autores principales: Sapkota, Keshab R., Chen, Weimin, Maloney, F. Scott, Poudyal, Uma, Wang, Wenyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5064367/
https://www.ncbi.nlm.nih.gov/pubmed/27739442
http://dx.doi.org/10.1038/srep35036

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5064367/
https://www.ncbi.nlm.nih.gov/pubmed/27739442
http://dx.doi.org/10.1038/srep35036

Ejemplares similares